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IPI80P03P405AKSA1

MOSFET P-CH 30V 80A TO262-3

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P-Channel 30 V 80A (Tc) 137W (Tc) Through Hole PG-TO262-3-1

Additional information

Additional Information

Series: OptiMOSâ„¢
RoHS Status: unknown
Manufacturer Lead Time: No lead time information available
Product Status: Obsolete
Packaging: Tube

Datasheet:

Download Free CAD Model:

Technical Details:
PackagingTube
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Rds On (Max) @ Id, Vgs5mOhm @ 80A, 10V
FET Feature-
Power Dissipation (Max)137W (Tc)
Vgs(th) (Max) @ Id4V @ 253µA
Supplier Device PackagePG-TO262-3-1
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds10300 pF @ 25 V
QualificationAEC-Q101

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