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IPI80P03P405AKSA1
MOSFET P-CH 30V 80A TO262-3
Manufacturer: Infineon Technologies
Categories: Discrete Semiconductor Products
Quality Control:Â Learn More
P-Channel 30 V 80A (Tc) 137W (Tc) Through Hole PG-TO262-3-1
Additional information
Additional Information
Series: OptiMOSâ„¢
RoHS Status: unknown
Manufacturer Lead Time: No lead time information available
Product Status: Obsolete
Packaging: Tube
Download Free CAD Model:
Technical Details:
Packaging | Tube |
Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
Mounting Type | Through Hole |
Operating Temperature | -55°C ~ 175°C (TJ) |
Technology | MOSFET (Metal Oxide) |
FET Type | P-Channel |
Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
Rds On (Max) @ Id, Vgs | 5mOhm @ 80A, 10V |
FET Feature | - |
Power Dissipation (Max) | 137W (Tc) |
Vgs(th) (Max) @ Id | 4V @ 253µA |
Supplier Device Package | PG-TO262-3-1 |
Grade | Automotive |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs (Max) | ±20V |
Drain to Source Voltage (Vdss) | 30 V |
Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 10300 pF @ 25 V |
Qualification | AEC-Q101 |
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