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AIMW120R045M1XKSA1
SICFET N-CH 1200V 52A TO247-3
Manufacturer: Infineon Technologies
Categories: Discrete Semiconductor Products
Quality Control: Learn More
N-Channel 1200 V 52A (Tc) 228W (Tc) Through Hole PG-TO247-3
Additional information
Additional Information
Series: CoolSiC™
RoHS Status: ROHS3 Compliant
Manufacturer Lead Time: 39 week(s)
Product Status: Active
Packaging: Tube
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Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 52A (Tc) |
| Rds On (Max) @ Id, Vgs | 59mOhm @ 20A, 15V |
| FET Feature | - |
| Power Dissipation (Max) | 228W (Tc) |
| Vgs(th) (Max) @ Id | 5.7V @ 10mA |
| Supplier Device Package | PG-TO247-3 |
| Grade | Automotive |
| Vgs (Max) | +20V, -7V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 57 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2130 pF @ 800 V |
| Qualification | AEC-Q101 |
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