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IDW32G65C5BXKSA2
DIODE SIL CARB 650V 16A TO247-3
Manufacturer: Infineon Technologies
Categories: Discrete Semiconductor Products
Quality Control: Learn More
Diode 650 V 16A Through Hole PG-TO247-3
Additional information
Additional Information
Series: CoolSiC™+
RoHS Status: ROHS3 Compliant
Manufacturer Lead Time: 17 week(s)
Product Status: Active
Packaging: Tube
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Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 470pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 16A |
| Supplier Device Package | PG-TO247-3 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 16 A |
| Current - Reverse Leakage @ Vr | 200 µA @ 650 V |
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