IRFHM792TRPBF

MOSFET 2N-CH 100V 2.3A 8PQFN

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Infineon Technologies HEXFET® IRFHM792TRPBF is a dual N-channel MOSFET array designed for efficient power management. This component boasts a 100V drain-source voltage (Vdss) and a continuous drain current (Id) of 2.3A at 25°C. The device features a low on-resistance (Rds On) of 195mOhm maximum at 2.9A and 10V gate-source voltage (Vgs), contributing to reduced conduction losses. With a gate charge (Qg) of 6.3nC maximum at 10V and input capacitance (Ciss) of 251pF maximum at 25V, it offers optimized switching characteristics. The IRFHM792TRPBF is housed in an 8-PQFN (3.3x3.3) surface-mount package, designated as Power33, supplied on tape and reel. Its compact form factor and robust performance make it suitable for applications in automotive and industrial sectors. The operating temperature range is from -55°C to 150°C.

Additional Information

Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:

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Technical Details:

Packaging	Tape & Reel (TR)
Package / Case	8-PowerVDFN
Mounting Type	Surface Mount
Configuration	2 N-Channel (Dual)
Operating Temperature	-55°C ~ 150°C (TJ)
Technology	MOSFET (Metal Oxide)
Power - Max	2.3W
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	2.3A
Input Capacitance (Ciss) (Max) @ Vds	251pF @ 25V
Rds On (Max) @ Id, Vgs	195mOhm @ 2.9A, 10V
Gate Charge (Qg) (Max) @ Vgs	6.3nC @ 10V
FET Feature	-
Vgs(th) (Max) @ Id	4V @ 10µA
Supplier Device Package	8-PQFN (3.3x3.3), Power33