IRF7707GTRPBF

MOSFET P-CH 20V 7A 8TSSOP

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Infineon Technologies HEXFET® IRF7707GTRPBF is a P-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 20V and a continuous drain current (Id) of 7A at 25°C. The Rds On is specified at a maximum of 22mOhm at 7A and 4.5V Vgs. With a gate charge (Qg) of 47 nC at 4.5V and input capacitance (Ciss) of 2361 pF at 15V, this MOSFET is optimized for efficient switching. The device operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 1.5W (Ta). Packaged in an 8-TSSOP (0.173", 4.40mm width) on Tape & Reel (TR), it is suitable for surface mounting. This component finds application in power management solutions, battery charging circuits, and portable electronics.

Additional Information

Series: HEXFET®RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:

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Technical Details:

Packaging	Tape & Reel (TR)
Package / Case	8-TSSOP (0.173"", 4.40mm Width)
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Technology	MOSFET (Metal Oxide)
FET Type	P-Channel
Current - Continuous Drain (Id) @ 25°C	7A (Ta)
Rds On (Max) @ Id, Vgs	22mOhm @ 7A, 4.5V
FET Feature	-
Power Dissipation (Max)	1.5W (Ta)
Vgs(th) (Max) @ Id	1.2V @ 250µA
Supplier Device Package	8-TSSOP
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Vgs (Max)	±12V
Drain to Source Voltage (Vdss)	20 V
Gate Charge (Qg) (Max) @ Vgs	47 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds	2361 pF @ 15 V