JANSG2N2222A

RH SMALL-SIGNAL BJT

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Microchip Technology JANSG2N2222A is an NPN bipolar junction transistor (BJT) designed for robust performance in demanding applications. This through-hole TO-18 (TO-206AA) packaged device offers a collector-emitter breakdown voltage of 50V and a continuous collector current capability of 800mA. With a maximum power dissipation of 500mW and an extended operating temperature range of -65°C to 200°C, the JANSG2N2222A is suitable for use in industrial control, aerospace, and defense systems. Key electrical specifications include a minimum DC current gain (hFE) of 100 at 150mA and 10V, and a Vce(sat) of 1V at 50mA and 500mA. The device exhibits a collector cutoff current of 50nA.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Bulk

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Technical Details:

Packaging	Bulk
Package / Case	TO-206AA, TO-18-3 Metal Can
Mounting Type	Through Hole
Transistor Type	NPN
Operating Temperature	-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic	1V @ 50mA, 500mA
Current - Collector Cutoff (Max)	50nA
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 150mA, 10V
Frequency - Transition	-
Supplier Device Package	TO-18 (TO-206AA)
Current - Collector (Ic) (Max)	800 mA
Voltage - Collector Emitter Breakdown (Max)	50 V
Power - Max	500 mW