JANSR2N2222A

TRANS NPN 50V 0.8A TO18

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Microchip Technology JANSR2N2222A is an NPN bipolar junction transistor (BJT) designed for high-reliability applications. This through-hole component features a 50V collector-emitter breakdown voltage and a maximum collector current of 800mA. With a power dissipation rating of 500mW and a wide operating temperature range of -65°C to 200°C, it is suitable for demanding environments. The transistor offers a minimum DC current gain (hFE) of 100 at 150mA and 10V. Packaged in a TO-18 (TO-206AA) metal can, this device meets MIL-PRF-19500/255 qualification, indicating its suitability for military and aerospace sectors. It is commonly employed in switching and amplification circuits across various industrial and defense applications.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDatasheet:

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Technical Details:

Packaging	Bulk
Package / Case	TO-206AA, TO-18-3 Metal Can
Mounting Type	Through Hole
Transistor Type	NPN
Operating Temperature	-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic	1V @ 50mA, 500mA
Current - Collector Cutoff (Max)	50nA
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 150mA, 10V
Frequency - Transition	-
Supplier Device Package	TO-18 (TO-206AA)
Grade	Military
Current - Collector (Ic) (Max)	800 mA
Voltage - Collector Emitter Breakdown (Max)	50 V
Power - Max	500 mW
Qualification	MIL-PRF-19500/255