JANTX2N3421S

TRANS NPN 80V 3A TO39

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Microchip Technology JANTX2N3421S is a JANTX qualified NPN bipolar junction transistor (BJT) in a TO-39 (TO-205AD) metal can package. This through-hole component offers a collector-emitter breakdown voltage of 80V and a continuous collector current capability of up to 3A. With a maximum power dissipation of 1W and a minimum DC current gain (hFE) of 40 at 1A and 2V, the JANTX2N3421S is suitable for applications requiring robust performance in demanding environments. The device exhibits a collector saturation voltage (Vce(sat)) of 500mV at 200mA collector current and 200mA base current. Its operational temperature range extends from -65°C to 200°C. This transistor is designed for use in military and aerospace applications, meeting the stringent requirements of MIL-PRF-19500/393.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:

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Technical Details:

Packaging	Bulk
Package / Case	TO-205AD, TO-39-3 Metal Can
Mounting Type	Through Hole
Transistor Type	NPN
Operating Temperature	-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic	500mV @ 200mA, 2A
Current - Collector Cutoff (Max)	5µA
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 1A, 2V
Frequency - Transition	-
Supplier Device Package	TO-39 (TO-205AD)
Grade	Military
Current - Collector (Ic) (Max)	3 A
Voltage - Collector Emitter Breakdown (Max)	80 V
Power - Max	1 W
Qualification	MIL-PRF-19500/393