IRFP150A

MOSFET N-CH 100V 43A TO3PN

Manufacturer: onsemi

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onsemi's IRFP150A is an N-Channel Power MOSFET designed for high-performance switching applications. This through-hole component, packaged in a TO-3PN (TO-3P-3, SC-65-3) case, offers a 100V drain-source breakdown voltage and a continuous drain current capability of 43A at 25°C (Tc). With a maximum power dissipation of 193W (Tc) and a low on-resistance of 40mOhm at 21.5A and 10V, it is suitable for power supply units, motor control, and automotive applications. The device features a gate charge of 97 nC at 10V and an input capacitance of 2270 pF at 25V. It operates within a junction temperature range of -55°C to 175°C and has a maximum gate-source voltage of ±20V.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:

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Technical Details:

Packaging	Tube
Package / Case	TO-3P-3, SC-65-3
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 175°C (TJ)
Technology	MOSFET (Metal Oxide)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	43A (Tc)
Rds On (Max) @ Id, Vgs	40mOhm @ 21.5A, 10V
FET Feature	-
Power Dissipation (Max)	193W (Tc)
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-3PN
Drive Voltage (Max Rds On, Min Rds On)	10V
Vgs (Max)	±20V
Drain to Source Voltage (Vdss)	100 V
Gate Charge (Qg) (Max) @ Vgs	97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	2270 pF @ 25 V