SI5906DU-T1-GE3

MOSFET 2N-CH 30V 6A PPAK CHIPFET

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Vishay Siliconix TrenchFET® SI5906DU-T1-GE3 is a dual N-channel MOSFET array designed for efficient power switching applications. This component features a 30V drain-source voltage rating and a continuous drain current capability of 6A at 25°C. The low on-resistance of 31mOhm (max) at 4.8A, 10V, coupled with a logic-level gate, ensures optimal performance in demanding power management scenarios. With a maximum power dissipation of 10.4W and a low gate charge of 8.6nC (max) at 10V, this MOSFET array is suitable for applications requiring high switching frequencies and reduced power loss. The device is housed in a PowerPAK® ChipFET™ Dual package, facilitating surface mounting and thermal management. Operating temperature ranges from -55°C to 150°C. This component is commonly utilized in automotive, industrial, and consumer electronics power conversion systems.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)

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Technical Details:

Packaging	Tape & Reel (TR)
Package / Case	PowerPAK® ChipFET™ Dual
Mounting Type	Surface Mount
Configuration	2 N-Channel (Dual)
Operating Temperature	-55°C ~ 150°C (TJ)
Technology	MOSFET (Metal Oxide)
Power - Max	10.4W
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	6A
Input Capacitance (Ciss) (Max) @ Vds	300pF @ 15V
Rds On (Max) @ Id, Vgs	31mOhm @ 4.8A, 10V
Gate Charge (Qg) (Max) @ Vgs	8.6nC @ 10V
FET Feature	Logic Level Gate
Vgs(th) (Max) @ Id	2.2V @ 250µA
Supplier Device Package	PowerPAK® ChipFet Dual