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IPS12CN10LGBKMA1
MOSFET N-CH 100V 69A TO251-3
Manufacturer: Infineon Technologies
Categories: Discrete Semiconductor Products
Quality Control: Learn More
N-Channel 100 V 69A (Tc) 125W (Tc) Through Hole PG-TO251-3-11
Additional information
Additional Information
Series: OptiMOS™
RoHS Status: unknown
Manufacturer Lead Time: No lead time information available
Product Status: Obsolete
Packaging: Tube
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Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 69A (Tc) |
| Rds On (Max) @ Id, Vgs | 11.8mOhm @ 69A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 83µA |
| Supplier Device Package | PG-TO251-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5600 pF @ 50 V |
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