MPQ6842

SMALL SIGNAL BIPOLAR TRANSISTOR

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Bipolar (BJT) Transistor Array 1 NPN, 1 PNP Complementary 30V 200mA 350MHz 500mW Through Hole 14-PDIP

Additional information

Additional Information

Series:
RoHS Status: RoHS non-compliant
Manufacturer Lead Time: No lead time information available
Product Status: Active
Packaging: Bulk

Datasheet:

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Technical Details:
PackagingBulk
Package / Case14-DIP (0.300", 7.62mm)
Mounting TypeThrough Hole
Transistor Type1 NPN, 1 PNP Complementary
Operating Temperature-55°C ~ 150°C (TJ)
Power - Max500mW
Current - Collector (Ic) (Max)200mA
Voltage - Collector Emitter Breakdown (Max)30V
Vce Saturation (Max) @ Ib, Ic150mV @ 50mA, 500mA
Current - Collector Cutoff (Max)50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 10mA, 1V
Frequency - Transition350MHz
Supplier Device Package14-PDIP
Grade-
Qualification-

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