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IRF8306MTRPBF

MOSFET N-CH 30V 23A DIRECTFET

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N-Channel 30 V 23A (Ta), 140A (Tc) 2.1W (Ta), 75W (Tc) Surface Mount DIRECTFETâ„¢ MX

Additional information

Additional Information

Series: HEXFET®
RoHS Status: unknown
Manufacturer Lead Time: No lead time information available
Product Status: Obsolete
Packaging: Tape & Reel (TR)

Datasheet:

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Technical Details:
PackagingTape & Reel (TR)
Package / CaseDirectFETâ„¢ Isometric MX
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C23A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs2.5mOhm @ 23A, 10V
FET FeatureSchottky Diode (Body)
Power Dissipation (Max)2.1W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id2.35V @ 100µA
Supplier Device PackageDIRECTFETâ„¢ MX
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs38 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds4110 pF @ 15 V

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