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FCU600N65S3R0
MOSFET N-CH 650V 6A IPAK
Manufacturer: onsemi
Categories: Discrete Semiconductor Products
Quality Control:Â Learn More
N-Channel 650 V 6A (Tc) 54W (Tc) Through Hole IPAK
Additional information
Additional Information
Series: SuperFET® III
RoHS Status: ROHS3 Compliant
Manufacturer Lead Time: No lead time information available
Product Status: Obsolete
Packaging: Tube
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Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 54W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 600µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 465 pF @ 400 V |
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