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STFI15N65M5

MOSFET N CH 650V 11A I2PAKFP

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N-Channel 650 V 11A (Tc) 30W (Tc) Through Hole TO-281 (I2PAKFP)

Additional information

Additional Information

Series: MDmeshâ„¢ V
RoHS Status: ROHS3 Compliant
Manufacturer Lead Time: No lead time information available
Product Status: Obsolete
Packaging: Tube

Datasheet:

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Technical Details:
PackagingTube
Package / CaseTO-262-3 Full Pack, I2PAK
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Rds On (Max) @ Id, Vgs340mOhm @ 5.5A, 10V
FET Feature-
Power Dissipation (Max)30W (Tc)
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device PackageTO-281 (I2PAKFP)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±25V
Drain to Source Voltage (Vdss)650 V
Gate Charge (Qg) (Max) @ Vgs22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds816 pF @ 100 V

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