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IPI80N08S406AKSA1
MOSFET N-CH 80V 80A TO262-3
Manufacturer: Infineon Technologies
Categories: Discrete Semiconductor Products
Quality Control: Learn More
N-Channel 80 V 80A (Tc) 150W (Tc) Through Hole PG-TO262-3-1
Additional information
Additional Information
Series: OptiMOS™
RoHS Status: ROHS3 Compliant
Manufacturer Lead Time: No lead time information available
Product Status: Obsolete
Packaging: Bulk
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Technical Details:
| Packaging | Bulk |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.8mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 90µA |
| Supplier Device Package | PG-TO262-3-1 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4800 pF @ 25 V |
| Qualification | AEC-Q101 |
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