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FQP9N90C
MOSFET N-CH 900V 8A TO220-3
Manufacturer: onsemi
Categories: Discrete Semiconductor Products
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N-Channel 900 V 8A (Tc) 205W (Tc) Through Hole TO-220-3
Additional information
Additional Information
Series: QFET®
RoHS Status: ROHS3 Compliant
Manufacturer Lead Time: 25 week(s)
Product Status: Active
Packaging: Tube
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Technical Details:
Packaging | Tube |
Package / Case | TO-220-3 |
Mounting Type | Through Hole |
Operating Temperature | -55°C ~ 150°C (TJ) |
Technology | MOSFET (Metal Oxide) |
FET Type | N-Channel |
Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
Rds On (Max) @ Id, Vgs | 1.4Ohm @ 4A, 10V |
FET Feature | - |
Power Dissipation (Max) | 205W (Tc) |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Supplier Device Package | TO-220-3 |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs (Max) | ±30V |
Drain to Source Voltage (Vdss) | 900 V |
Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 2730 pF @ 25 V |
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