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IPP60R160P7XKSA1
MOSFET N-CH 650V 20A TO220-3-1
Manufacturer: Infineon Technologies
Categories: Discrete Semiconductor Products
Quality Control: Learn More
N-Channel 650 V 20A (Tc) 81W (Tc) Through Hole PG-TO220-3-1
Additional information
Additional Information
Series: CoolMOS™ P7
RoHS Status: ROHS3 Compliant
Manufacturer Lead Time: 17 week(s)
Product Status: Active
Packaging: Tube
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Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 6.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 81W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 350µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1317 pF @ 400 V |
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